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Preliminary Technical Information
TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN520N075T2
VDSS ID25
= =
RDS(on)
75V 480A 1.9m
miniBLOC, SOT-227 E153432
S
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C
Maximum Ratings 75 75 20 30 480 200 1500 200 3 940 -55 ... +175 175 -55 ... +175 V V V V A A A A J W C C C C C V~ V~ Nm/lb.in. Nm/lb.in. g
G
S D G = Gate S = Source D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
Features International Standard Package miniBLOC, with Aluminium Nitride Isolation 175C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL 1mA t = 1 minute t = 1 second
300 260 2500 3000 1.5/13 1.3/11.5 30
Mounting Torque Terminal Connection Torque
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 150C
Characteristic Values Min. Typ. Max. 75 2.5 5.0 200 V V nA
Easy to Mount Space Savings High Power Density
Applications DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications
25 A 2 mA 1.5 1.9 m
VGS = 10V, ID = 100A, Note 1
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100193A(11/09)
IXFN520N075T2
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 260A Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 200A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 65 105 41 4150 530 1.36 48 36 80 35 545 177 135 S nF pF pF ns ns ns ns nC nC nC 0.16 C/W C/W (M4 screws (4x) supplied) SOT-227B (IXFN) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr IRM QRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF = 150A, VGS = 0V -di/dt = 100A/s VR = 37.5V 7 357 Characteristic Values Min. Typ. Max. 520 1600 1.25 A A V
150 ns A nC
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFN520N075T2
Fig. 1. Output Characteristics @ T J = 25C
350 300 250 VGS = 15V 10V 9V 350 VGS = 15V 300 250 10V 9V 8V
Fig. 2. Extended Output Characteristics @ T J = 25C
8V
ID - Amperes
ID - Amperes
200 7V 150 100 50 5V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
200 150 100 50
7V
6V
6V
5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 150C
350 300 250 VGS = 15V 10V 9V 8V 2.2 2.0 1.8
Fig. 4. RDS(on) Normalized to ID = 150A Value vs. Junction Temperature
VGS = 10V
R DS(on) - Normalized
ID = 300A 1.6 1.4 1.2 1.0 0.8 ID = 150A
ID - Amperes
200 150 100 50 0 0.0 0.2 0.4 0.6 0.8 1.0
7V
6V
5V 1.2 1.4
0.6 -50 -25 0 25 50 75 100 125 150 175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 150A Value vs. Drain Current
2.2 2.0 TJ = 175C
220 200 180 160
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
R DS(on) - Normalized
1.8 1.6 1.4 1.2 TJ = 25C 1.0 0.8 0 50 100 150 200 250 300 350
VGS = 10V 15V
ID - Amperes
140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 175
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFN520N075T2
Fig. 7. Input Admittance
200 180 160 140 TJ = 150C 25C - 40C 200 180 160 140 25C TJ = - 40C
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
120 100 80 60 40 20 0 3.0 3.5 4.0 4.5 5.0
120 100 80 60 40 20 0
150C
5.5
6.0
6.5
7.0
0
20
40
60
80
100
120
140
160
180
200
220
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300
Fig. 10. Gate Charge
10 9 VDS = 37.5V I D = 260A I G = 10mA
250
8 7
200
IS - Amperes
VGS - Volts
TJ = 150C TJ = 25C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
6 5 4 3 2 1
150
100
50
0
0 0 100 200 300 400 500 600
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100.0
10,000
Fig. 12. Forward-Bias Safe Operating Area
Capacitance - NanoFarads
Ciss 10.0
RDS(on) Limit 1,000 25s
ID - Amperes
Coss 1.0
100
External Lead Limit
100s
1ms
10
TJ = 175C TC = 25C Single Pulse DC
10ms 100ms
f = 1 MHz
0.1 0 5 10 15 20
Crss
1
25
30
35
40
0.1
1
10
100
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN520N075T2
Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature
180 160 140 RG = 1 , VGS = 10V VDS = 37.5V 180 160 140 RG = 1 , VGS = 10V VDS = 37.5V TJ = 125C
Fig. 14. Resistive Turn-on Rise Time vs. Drain Current
t r - Nanoseconds
I 100 80 60
D
= 200A
t r - Nanoseconds
D
120
120 100 80 60 40 20 0
I 40 20 0 25 35 45 55 65 75
= 100A TJ = 25C
85
95
105
115
125
40
60
80
100
120
140
160
180
200
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance
600 240 44 42 40
Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature
140
tr
500 VDS = 37.5V
td(on) - - - I D = 200A 200
tf
VDS = 37.5V
td(off) - - - -
TJ = 125C, VGS = 10V
RG = 1, VGS = 10V
130 120 110
t d(off) - Nanoseconds
t d(on) - Nanoseconds
t r - Nanoseconds
t f - Nanoseconds
400
160
38 I D = 100A 36 34 32 30 25 35 45 55 65 75 85 95 105 115 I D = 200A
300 I D = 100A 200
120
100 90 80 70 125
80
100
40
0 1 2 3 4 5 6 7 8 9 10
0
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs. Drain Current
46 44 42 180 600
Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance
600
tf
VDS = 37.5V
td(off) - - - -
RG = 1, VGS = 10V
160 140 120
tf
500 VDS = 37.5V
td(off) - - - 500
TJ = 125C, VGS = 10V
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
t f - Nanoseconds
400
I D = 200A, 100A
400
40 38 36 34 32 40 60 80 100 120 140 160 180 TJ = 125C
300
300
TJ = 25C
100 80 60 40 200
200
200
100
100
0 1 2 3 4 5 6 7 8 9 10
0
ID - Amperes
RG - Ohms
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFN520N075T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximum Transient Thermal Impedance
0.300
.sadgsfgsf
0.100
Z (th )JC - C / W
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_520N075T2 (V9)11-09-09

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